In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO2
نویسندگان
چکیده
We have employed attenuated total reflection Fourier transforms infrared spectroscopy sATR-FTIRSd to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO2 films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO2 is etched in an inductively coupled plasma reactor, using CHF3 and Ar. During etching, the IR absorbance of Si–O–Si stretching modes near 1080 cm −1
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